ECR PECVD 법으로 제조한 고집적 메모리소자 charge storage capacitor용 PLZT박막의 전기적 특성

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dc.contributor.author이원종-
dc.date.accessioned2013-03-15T01:31:12Z-
dc.date.available2013-03-15T01:31:12Z-
dc.date.created2012-02-06-
dc.date.issued1996-01-01-
dc.identifier.citation한국재료학회 1996 추계학술연구발표회, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/115461-
dc.languageKOR-
dc.titleECR PECVD 법으로 제조한 고집적 메모리소자 charge storage capacitor용 PLZT박막의 전기적 특성-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname한국재료학회 1996 추계학술연구발표회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor이원종-
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MS-Conference Papers(학술회의논문)
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