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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Annealing behavior of a double MeV implanted siliconAnnealing behavior of a double MeV implanted silicon

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorCho, NH-
dc.contributor.authorHuh, TH-
dc.contributor.authorJang, YT-
dc.contributor.authorRo, JS-
dc.contributor.authorLee, KH-
dc.contributor.authorKim, JC-
dc.date.accessioned2013-03-15T01:22:36Z-
dc.date.available2013-03-15T01:22:36Z-
dc.date.created2012-02-06-
dc.date.issued1997-05-22-
dc.identifier.citationInternational Conf. on Ion Implantation Technology, v., no., pp.661 - 661-
dc.identifier.urihttp://hdl.handle.net/10203/115398-
dc.languageENG-
dc.titleAnnealing behavior of a double MeV implanted silicon-
dc.title.alternativeAnnealing behavior of a double MeV implanted silicon-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage661-
dc.citation.endingpage661-
dc.citation.publicationnameInternational Conf. on Ion Implantation Technology-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorCho, NH-
dc.contributor.nonIdAuthorHuh, TH-
dc.contributor.nonIdAuthorJang, YT-
dc.contributor.nonIdAuthorRo, JS-
dc.contributor.nonIdAuthorLee, KH-
dc.contributor.nonIdAuthorKim, JC-
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EE-Conference Papers(학술회의논문)
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