A Shallow-Deep Transition of Donors in GaAs and AlGaAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 장기주 | - |
| dc.date.accessioned | 2013-03-15T00:28:49Z | - |
| dc.date.available | 2013-03-15T00:28:49Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989 | - |
| dc.identifier.citation | Solid State Physic Symposium on the Semiconducor Physics, v., no., pp.29 - 35 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/115007 | - |
| dc.language | ENG | - |
| dc.title | A Shallow-Deep Transition of Donors in GaAs and AlGaAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 29 | - |
| dc.citation.endingpage | 35 | - |
| dc.citation.publicationname | Solid State Physic Symposium on the Semiconducor Physics | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 장기주 | - |
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