The Chemical Bonding Effects on the Stability of Deep Donors in S-Doped GaAs and InP

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dc.contributor.authorCheong, BH-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-14T23:38:32Z-
dc.date.available2013-03-14T23:38:32Z-
dc.date.created2012-02-06-
dc.date.issued1994-01-01-
dc.identifier.citation22nd International Conference on the Physics of Semiconductor, v., no., pp.2395 - 2395-
dc.identifier.urihttp://hdl.handle.net/10203/114607-
dc.languageENG-
dc.publisherWorld Scientific Singapore-
dc.titleThe Chemical Bonding Effects on the Stability of Deep Donors in S-Doped GaAs and InP-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage2395-
dc.citation.endingpage2395-
dc.citation.publicationname22nd International Conference on the Physics of Semiconductor-
dc.identifier.conferencecountryCanada-
dc.identifier.conferencecountryCanada-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorCheong, BH-
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PH-Conference Papers(학술회의논문)
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