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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

SIlicon Direct Bonding(SDB) SOI nMOS 트랜지스터의 기생채널에 의한 누설전류 특성

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강상원researcher
Issue Date
1992
Language
KOR
Citation

한국전자공학회, 합동학술발표회 논문집 제10호, 제1권, pp.189 -

URI
http://hdl.handle.net/10203/113963
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MS-Conference Papers(학술회의논문)
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