Tensor low energy electron diffraction study for the structure of a Cr(001)-p-(1x1)-N surface

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dc.contributor.authorRi, CSko
dc.contributor.authorCho, YPko
dc.contributor.authorPark, JBko
dc.contributor.authorKang, JSko
dc.contributor.authorKim, Sehunko
dc.contributor.authorLee, KHko
dc.date.accessioned2009-09-21T07:16:17Z-
dc.date.available2009-09-21T07:16:17Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.15, no.5, pp.1623 - 1627-
dc.identifier.issn1071-1023-
dc.identifier.urihttp://hdl.handle.net/10203/11394-
dc.description.abstractThe structure of the Cr(001)-p-(1X1)-N surface was studied by use of the tensor low energy electron diffraction (LEED) current-voltage (I-V) analysis. From the LEED diffraction pattern observed in the process of cleaning of the Cr(001) surface, N was found to form a (1X1) structure on the Cr(001) surfacer Experimental I-V characteristic curves for the Cr(001)-p-(1X1)-N structure were generated by Video LEED System and these experimental results were compared with that obtained through theoretical calculations via the TLEED program to analyze surface structure. As a result, we found that N is adsorbed in the hollow site on the Cr(001) surface. The interlayer distances of d(N1), d(12), and d(23) are found to be 0.251, 1.814, and 1.410 Angstrom, respectively. (C) 1997 American Vacuum Society. [S0734-211X(97)03505-1].-
dc.description.sponsorshipThis study has been supported in part by Non-directed Research Fund, Korea Research Foundation and in part by a grant from CAPT of Keimyung University designated by KOSEF and also in part by the Research Funds, the Catholic University of Korea, in 1996.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectLEED-
dc.titleTensor low energy electron diffraction study for the structure of a Cr(001)-p-(1x1)-N surface-
dc.typeArticle-
dc.identifier.wosidA1997YC38700008-
dc.identifier.scopusid2-s2.0-0031219755-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue5-
dc.citation.beginningpage1623-
dc.citation.endingpage1627-
dc.citation.publicationnameJOURNAL OF VACUUM SCIENCE TECHNOLOGY B-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorRi, CS-
dc.contributor.nonIdAuthorCho, YP-
dc.contributor.nonIdAuthorPark, JB-
dc.contributor.nonIdAuthorKang, JS-
dc.contributor.nonIdAuthorLee, KH-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusLEED-
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