DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Kyounghoon | ko |
dc.contributor.author | GutierrezAitken, AL | ko |
dc.contributor.author | Zhang, XK | ko |
dc.contributor.author | Haddad, GI | ko |
dc.contributor.author | Bhattacharya, P | ko |
dc.date.accessioned | 2007-08-28T03:22:39Z | - |
dc.date.available | 2007-08-28T03:22:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-08 | - |
dc.identifier.citation | JOURNAL OF LIGHTWAVE TECHNOLOGY, v.14, no.8, pp.1831 - 1839 | - |
dc.identifier.issn | 0733-8724 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1138 | - |
dc.description.abstract | High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Angstrom-thick InGaAs pre-collector layer of the HBT as the absorbing layer, exhibited a responsivity of similar to 0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at lambda = 1.55 mu m. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Omega demonstrated a transimpedance gain of 46 dB Omega and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 mu m(2) p-i-n photodiode consumed a small de power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2(31)-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s. | - |
dc.description.sponsorship | Advanced Research Projects Agency under Grant MDA 972-94-1-0004 (COST) and U.S. Army Research Office (URI program) under Grant DAAL03-92-G-0109 | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSIMPEDANCE PHOTORECEIVER | - |
dc.subject | TRANSMISSION-SYSTEMS | - |
dc.subject | N/HBT PHOTORECEIVER | - |
dc.title | Design, modeling, and characterization of monolithically integrated InP-based (1.55 mu m) high-speed (24Gb/s) p-i-nMBT front-end photoreceivers | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VD02800009 | - |
dc.identifier.scopusid | 2-s2.0-0030214990 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1831 | - |
dc.citation.endingpage | 1839 | - |
dc.citation.publicationname | JOURNAL OF LIGHTWAVE TECHNOLOGY | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | GutierrezAitken, AL | - |
dc.contributor.nonIdAuthor | Zhang, XK | - |
dc.contributor.nonIdAuthor | Haddad, GI | - |
dc.contributor.nonIdAuthor | Bhattacharya, P | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSIMPEDANCE PHOTORECEIVER | - |
dc.subject.keywordPlus | TRANSMISSION-SYSTEMS | - |
dc.subject.keywordPlus | N/HBT PHOTORECEIVER | - |
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