A scanning tunneling spectroscopy study on TCNQ/n-Si and/p-Si

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A thin film (thickness: 1.5 nm) of tetracyanoquinodimethane (TCNQ), a well-known electron acceptor, was fabricated on p-Si and n-Si using a spin casting method. The junction properties of these systems were investigated using scanning tunneling spectroscopy (STS). IN curves of the two systems showed rectifying properties with different polarity. It can provide a new technology to fabricate molecular-level rectifier if nanolithography is accomplished on these systems.
Publisher
TAYLOR & FRANCIS LTD
Issue Date
2002
Language
English
Article Type
Article; Proceedings Paper
Citation

MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.377, pp.25 - 28

ISSN
1058-725X
DOI
10.1080/10587250290088456
URI
http://hdl.handle.net/10203/11388
Appears in Collection
CH-Journal Papers(저널논문)
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