DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sang-Won Kang | - |
dc.date.accessioned | 2013-03-14T22:06:16Z | - |
dc.date.available | 2013-03-14T22:06:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991 | - |
dc.identifier.citation | Proc. of 2nd ICVC, v., no., pp.268 - | - |
dc.identifier.uri | http://hdl.handle.net/10203/113821 | - |
dc.language | ENG | - |
dc.title | The Charateristics of SOI n-MOSFET's by Bonding and Etch-back Technology | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 268 | - |
dc.citation.publicationname | Proc. of 2nd ICVC | - |
dc.identifier.conferencecountry | Belgium | - |
dc.contributor.localauthor | Sang-Won Kang | - |
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