LP_MOCVD Process for Ferroelectric Thin Films with Precise Composition Control

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dc.contributor.author김호기-
dc.date.accessioned2013-03-14T22:05:41Z-
dc.date.available2013-03-14T22:05:41Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationThe First MRS Korea-Mexico Joint Symposium on Advanced Materials and Technology, Nov. 24-25. KOEX. Seoul. Korea, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/113816-
dc.languageKOR-
dc.titleLP_MOCVD Process for Ferroelectric Thin Films with Precise Composition Control-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe First MRS Korea-Mexico Joint Symposium on Advanced Materials and Technology, Nov. 24-25. KOEX. Seoul. Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor김호기-
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MS-Conference Papers(학술회의논문)
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