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Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology

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dc.contributor.authorRieh, JSko
dc.contributor.authorQasaimeh, Oko
dc.contributor.authorLu, LHko
dc.contributor.authorYang, Kyounghoonko
dc.contributor.authorKatehi, LPBko
dc.contributor.authorBhattacharya, Pko
dc.contributor.authorCroke, ETko
dc.date.accessioned2007-08-28T03:13:11Z-
dc.date.available2007-08-28T03:13:11Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-02-
dc.identifier.citationIEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.2, pp.63 - 65-
dc.identifier.issn1051-8207-
dc.identifier.urihttp://hdl.handle.net/10203/1136-
dc.description.abstractMonolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single-and dual-feedback configurations, have been designed, fabricated, and characterized, The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB Omega and 3.2 GHz, respectively, The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB Omega and 3.3 GHz, respectively, Their performance characteristics are excellent in terms of their application in communication systems.-
dc.description.sponsorshipNASA-Cleveland under Grant NAG3-1903 and by the AFOSR under Grant F49620-95-1-0013.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFABRICATION-
dc.titleSingle- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology-
dc.typeArticle-
dc.identifier.wosid000071828500006-
dc.identifier.scopusid2-s2.0-0031999339-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue2-
dc.citation.beginningpage63-
dc.citation.endingpage65-
dc.citation.publicationnameIEEE MICROWAVE AND GUIDED WAVE LETTERS-
dc.identifier.doi10.1109/75.658642-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorRieh, JS-
dc.contributor.nonIdAuthorQasaimeh, O-
dc.contributor.nonIdAuthorLu, LH-
dc.contributor.nonIdAuthorKatehi, LPB-
dc.contributor.nonIdAuthorBhattacharya, P-
dc.contributor.nonIdAuthorCroke, ET-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorfeedback-
dc.subject.keywordAuthorfiber optical communication-
dc.subject.keywordAuthorheterojunction bipolar transistor (HBT)-
dc.subject.keywordAuthorSiGe-
dc.subject.keywordPlusFABRICATION-
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