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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

High-efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers at 850 nm

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dc.contributor.authorLee, Yong-Hee-
dc.contributor.authorJewell, J.L.-
dc.contributor.authorTell, B.-
dc.contributor.authorBrown-Goebeler, K.F.-
dc.contributor.authorLeibenguth, R.E.-
dc.contributor.authorAsom, M.T.-
dc.contributor.authorLivescu, G-
dc.contributor.authorLuther, L.-
dc.contributor.authorMattera, V.D.-
dc.date.accessioned2013-03-14T21:49:56Z-
dc.date.available2013-03-14T21:49:56Z-
dc.date.created2012-02-06-
dc.date.issued1990-
dc.identifier.citationAnnual Device Research. Conference, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/113683-
dc.languageENG-
dc.titleHigh-efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers at 850 nm-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameAnnual Device Research. Conference-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorJewell, J.L.-
dc.contributor.nonIdAuthorTell, B.-
dc.contributor.nonIdAuthorBrown-Goebeler, K.F.-
dc.contributor.nonIdAuthorLeibenguth, R.E.-
dc.contributor.nonIdAuthorAsom, M.T.-
dc.contributor.nonIdAuthorLivescu, G-
dc.contributor.nonIdAuthorLuther, L.-
dc.contributor.nonIdAuthorMattera, V.D.-
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PH-Conference Papers(학술회의논문)
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