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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Surface etching induced by Ce silicide formation on Si(100)

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dc.contributor.authorLee, Dko
dc.contributor.authorJeon, SMko
dc.contributor.authorLee, Gko
dc.contributor.authorKim, Sehunko
dc.contributor.authorHwang, Cko
dc.contributor.authorLee, Hko
dc.date.accessioned2009-09-21T05:08:17Z-
dc.date.available2009-09-21T05:08:17Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-09-
dc.identifier.citationSURFACE SCIENCE, v.601, pp.3823 - 3827-
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10203/11359-
dc.description.abstractWe investigate the temperature-dependent surface etching process induced by Ce silicide on Si(100) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(100) surface are gradually roughened due to the formation of Cc silicide as a function of substrate temperature. Unlike the Si(111) surface, however, terrace etching also occurs in addition to step roughening at 500 degrees C. Moreover, we found that Si(1 00) dinners are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(100) surface occurs the defect-induced strain at higher temperature (similar to 600 degrees C). (C) 2007 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government(MOST) (No. R01-2006-000-11247-0). Additional support (Prof. Sehun Kim) was supported by the Brain Korea 21 project, the SRC programs (Center for Nanotubes and Nanostructured Composites and the Center for Strongly Correlated Material Research) of MOST/KOSEF, and the National R & D Project for Nano Science and Technology. One of authors (Dr. Hwang) was supported by Vacuum Infra-Technology project.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCHAIN STRUCTURES-
dc.subjectSI(111)-
dc.subjectHYDROGEN-
dc.subjectGD-
dc.titleSurface etching induced by Ce silicide formation on Si(100)-
dc.typeArticle-
dc.identifier.wosid000250414600034-
dc.identifier.scopusid2-s2.0-34548655013-
dc.type.rimsART-
dc.citation.volume601-
dc.citation.beginningpage3823-
dc.citation.endingpage3827-
dc.citation.publicationnameSURFACE SCIENCE-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorJeon, SM-
dc.contributor.nonIdAuthorLee, G-
dc.contributor.nonIdAuthorHwang, C-
dc.contributor.nonIdAuthorLee, H-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorsurface etching-
dc.subject.keywordAuthorSTM-
dc.subject.keywordAuthorXPS-
dc.subject.keywordAuthorDVL-
dc.subject.keywordAuthorstep roughening-
dc.subject.keywordPlusCHAIN STRUCTURES-
dc.subject.keywordPlusSI(111)-
dc.subject.keywordPlusHYDROGEN-
dc.subject.keywordPlusGD-
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