Modeling of Small Size Effect for MOSFET's Considering the Gradual Doping Profile in the Source/drain Region
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sang-Won Kang | - |
| dc.date.accessioned | 2013-03-14T21:37:06Z | - |
| dc.date.available | 2013-03-14T21:37:06Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988 | - |
| dc.identifier.citation | Proc. of 19th Annul Conf. on Modeling and Simulation, v., no., pp.1905 - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/113581 | - |
| dc.language | ENG | - |
| dc.title | Modeling of Small Size Effect for MOSFET's Considering the Gradual Doping Profile in the Source/drain Region | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1905 | - |
| dc.citation.publicationname | Proc. of 19th Annul Conf. on Modeling and Simulation | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Sang-Won Kang | - |
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