Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(100)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ragan, R. | - |
| dc.contributor.author | Kim, S. | - |
| dc.contributor.author | Li, X. | - |
| dc.contributor.author | Stanley Williams, R. | - |
| dc.date.accessioned | 2009-09-21T01:46:06Z | - |
| dc.date.available | 2009-09-21T01:46:06Z | - |
| dc.date.issued | 2005-03-11 | - |
| dc.identifier.citation | Applied Physics A: Materials Science & Processing, Vol.80, No.6, pp.1339-1342 | en |
| dc.identifier.issn | 0947-8396 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/11343 | - |
| dc.description.abstract | Self-assembled ErSi2−x nanowires were grown on Si(001) substrates with an average nanowire width of 2.8 nm. Submonolayer coverage of platinum was deposited on the Si(001) surface post ErSi2−x growth. Scanning tunneling microscopy and reactive ion etching showed that platinum preferentially deposited on the nanowire surface versus the Si surface. Reactive ion etching of ErSi2−x nanowires with and without platinum on the surface demonstrated that platinum acted as a more resistant etch mask than ErSi2−x. Pt/ErSi2−x nanowires are air stable whereas ErSi2−x nanowires decompose after exposure to ambient for five weeks. | en |
| dc.description.sponsorship | The authors wish to acknowledge Yong Chen and Ted Kamins for enlightening discussions and Chengxiang Ji and Doug Ohlberg for help with experiments. We also acknowledge the Department of Advanced Research Projects for supplemental support. | en |
| dc.language.iso | en_US | en |
| dc.publisher | Springer Verlag (Germany) | en |
| dc.title | Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(100) | en |
| dc.type | Article | en |
| dc.identifier.doi | 10.1007/s00339-004-3162-4 | - |
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