Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(100)

Abstract

Self-assembled ErSi2−x nanowires were grown on Si(001) substrates with an average nanowire width of 2.8 nm. Submonolayer coverage of platinum was deposited on the Si(001) surface post ErSi2−x growth. Scanning tunneling microscopy and reactive ion etching showed that platinum preferentially deposited on the nanowire surface versus the Si surface. Reactive ion etching of ErSi2−x nanowires with and without platinum on the surface demonstrated that platinum acted as a more resistant etch mask than ErSi2−x. Pt/ErSi2−x nanowires are air stable whereas ErSi2−x nanowires decompose after exposure to ambient for five weeks.