Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(100)

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Self-assembled ErSi2−x nanowires were grown on Si(001) substrates with an average nanowire width of 2.8 nm. Submonolayer coverage of platinum was deposited on the Si(001) surface post ErSi2−x growth. Scanning tunneling microscopy and reactive ion etching showed that platinum preferentially deposited on the nanowire surface versus the Si surface. Reactive ion etching of ErSi2−x nanowires with and without platinum on the surface demonstrated that platinum acted as a more resistant etch mask than ErSi2−x. Pt/ErSi2−x nanowires are air stable whereas ErSi2−x nanowires decompose after exposure to ambient for five weeks.
Publisher
Springer Verlag (Germany)
Issue Date
2005-03-11
Citation

Applied Physics A: Materials Science & Processing, Vol.80, No.6, pp.1339-1342

ISSN
0947-8396
DOI
10.1007/s00339-004-3162-4
URI
http://hdl.handle.net/10203/11343
Appears in Collection
CH-Journal Papers(저널논문)

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