Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sang-Won Kang | - |
| dc.date.accessioned | 2013-03-14T21:18:46Z | - |
| dc.date.available | 2013-03-14T21:18:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992 | - |
| dc.identifier.citation | 1992 IEEE International SOI Conference Proceedings, v., no., pp.50 - 51 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/113417 | - |
| dc.language | ENG | - |
| dc.title | Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 50 | - |
| dc.citation.endingpage | 51 | - |
| dc.citation.publicationname | 1992 IEEE International SOI Conference Proceedings | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Sang-Won Kang | - |
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