Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors

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dc.contributor.authorSang-Won Kang-
dc.date.accessioned2013-03-14T21:18:46Z-
dc.date.available2013-03-14T21:18:46Z-
dc.date.created2012-02-06-
dc.date.issued1992-
dc.identifier.citation1992 IEEE International SOI Conference Proceedings, v., no., pp.50 - 51-
dc.identifier.urihttp://hdl.handle.net/10203/113417-
dc.languageENG-
dc.titleLeakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage50-
dc.citation.endingpage51-
dc.citation.publicationname1992 IEEE International SOI Conference Proceedings-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorSang-Won Kang-
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MS-Conference Papers(학술회의논문)
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