3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성Dependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature

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dc.contributor.author임굉수-
dc.contributor.author장재훈-
dc.date.accessioned2013-03-14T21:14:33Z-
dc.date.available2013-03-14T21:14:33Z-
dc.date.created2012-02-06-
dc.date.issued1994-01-01-
dc.identifier.citation대한전자공학회 학술대회, v.17, no.2, pp.971 - 972-
dc.identifier.urihttp://hdl.handle.net/10203/113362-
dc.languageKOR-
dc.title3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성-
dc.title.alternativeDependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.volume17-
dc.citation.issue2-
dc.citation.beginningpage971-
dc.citation.endingpage972-
dc.citation.publicationname대한전자공학회 학술대회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor임굉수-
dc.contributor.nonIdAuthor장재훈-
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EE-Conference Papers(학술회의논문)
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