3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성Dependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임굉수 | - |
| dc.contributor.author | 장재훈 | - |
| dc.date.accessioned | 2013-03-14T21:14:33Z | - |
| dc.date.available | 2013-03-14T21:14:33Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-01-01 | - |
| dc.identifier.citation | 대한전자공학회 학술대회, v.17, no.2, pp.971 - 972 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/113362 | - |
| dc.language | KOR | - |
| dc.title | 3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성 | - |
| dc.title.alternative | Dependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 17 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 971 | - |
| dc.citation.endingpage | 972 | - |
| dc.citation.publicationname | 대한전자공학회 학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 임굉수 | - |
| dc.contributor.nonIdAuthor | 장재훈 | - |
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