3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성Dependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature

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Issue Date
1994-01-01
Language
KOR
Citation

대한전자공학회 학술대회, v.17, no.2, pp.971 - 972

URI
http://hdl.handle.net/10203/113362
Appears in Collection
EE-Conference Papers(학술회의논문)
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