DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hee Chul | - |
dc.contributor.author | Kanemaru, S | - |
dc.contributor.author | Ishiwara, H | - |
dc.contributor.author | Furukawa, S | - |
dc.date.accessioned | 2013-03-14T21:02:01Z | - |
dc.date.available | 2013-03-14T21:02:01Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1987 | - |
dc.identifier.citation | Proc. 18th symp. on Ion Implantation and Submicron Fabrication, Saitama Japen, v., no., pp.37 - 40 | - |
dc.identifier.uri | http://hdl.handle.net/10203/113256 | - |
dc.language | ENG | - |
dc.title | Improvement of the Quality of GaAs Films on Fluorides Using Electron-Beam Exposure Epitaxy(EBE-Epitaxy) | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 37 | - |
dc.citation.endingpage | 40 | - |
dc.citation.publicationname | Proc. 18th symp. on Ion Implantation and Submicron Fabrication, Saitama Japen | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Kanemaru, S | - |
dc.contributor.nonIdAuthor | Ishiwara, H | - |
dc.contributor.nonIdAuthor | Furukawa, S | - |
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