DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, H. | - |
dc.contributor.author | Park, K. H. | - |
dc.contributor.author | Kim, C. | - |
dc.contributor.author | Shim, B. S. | - |
dc.contributor.author | Kim, Sehun | - |
dc.contributor.author | Moon, D. W. | - |
dc.date.accessioned | 2009-09-18T05:50:06Z | - |
dc.date.available | 2009-09-18T05:50:06Z | - |
dc.date.issued | 1992-04 | - |
dc.identifier.citation | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.67, No.1-4, pp.312-315 | en |
dc.identifier.issn | 0168-583X | - |
dc.identifier.uri | http://hdl.handle.net/10203/11324 | - |
dc.description.abstract | It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite(0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar + ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface. | en |
dc.description.sponsorship | This work was supported by the Korean Science and Engineering Foundation (1990-) and Center for Molecular Science (1991). | en |
dc.language.iso | en_US | en |
dc.publisher | Elsevier | en |
dc.title | Point defect formation on graphite surface induced by ion impact at energies near penetration threshold | en |
dc.type | Article | en |
dc.identifier.doi | 10.1016/0168-583X(92)95823-A | - |
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