DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ki-jeong | ko |
dc.contributor.author | Lee, H | ko |
dc.contributor.author | Choi, JH | ko |
dc.contributor.author | Lee, HK | ko |
dc.contributor.author | Kang, TH | ko |
dc.contributor.author | Kim, B | ko |
dc.contributor.author | Kim, Sehun | ko |
dc.date.accessioned | 2009-09-18T05:01:25Z | - |
dc.date.available | 2009-09-18T05:01:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.20, no.22 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11308 | - |
dc.description.abstract | We investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the pi* transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased. | - |
dc.description.sponsorship | This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (No. 2007-01156) and the SRC program (Center for Nanotubes and nanostructured composites) of MOST/KOSEF, the Center of Fusion Technology for Security, the National R&D Projects for Nano Science and Technology Korea Research Grant No. KRF-2005-070-C00063, a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-C00307). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CORE-LEVEL | - |
dc.subject | GRAPHITE | - |
dc.subject | FILMS | - |
dc.subject | GRAPHITIZATION | - |
dc.subject | GAS | - |
dc.title | Temperature dependent structural changes of graphene layers on 6H-SiC(0001) surfaces | - |
dc.type | Article | - |
dc.identifier.wosid | 000256145700045 | - |
dc.identifier.scopusid | 2-s2.0-44449174123 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 22 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sehun | - |
dc.contributor.nonIdAuthor | Lee, H | - |
dc.contributor.nonIdAuthor | Lee, HK | - |
dc.contributor.nonIdAuthor | Kang, TH | - |
dc.contributor.nonIdAuthor | Kim, B | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | CORE-LEVEL | - |
dc.subject.keywordPlus | GRAPHITE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GRAPHITIZATION | - |
dc.subject.keywordPlus | GAS | - |
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