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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Unidirectional Pt silicide nanowires grown on vicinal Si(100)

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dc.contributor.authorLim, Do Kyungko
dc.contributor.authorBae, Sung-Sooko
dc.contributor.authorChoi, Junghunko
dc.contributor.authorLee, Dohyunko
dc.contributor.authorSung, Da Eunko
dc.contributor.authorKim, Sehunko
dc.contributor.authorKim, JKko
dc.contributor.authorYeom, HWko
dc.contributor.authorLee, Hko
dc.date.accessioned2009-09-18T04:58:02Z-
dc.date.available2009-09-18T04:58:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-03-
dc.identifier.citationJOURNAL OF CHEMICAL PHYSICS, v.128, no.9-
dc.identifier.issn0021-9606-
dc.identifier.urihttp://hdl.handle.net/10203/11307-
dc.description.abstractWe investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra. (C) 2008 American Institute of Physics.-
dc.description.sponsorshipThis work was supported by the Brain Korea 21 project, the SRC program Center for Nanotubes and Nanostructured Composites of MOST/KOSEF, and Korea Research Foundation Grant No. KRF-2005-070-C00063. One of the authors Hangil Lee was supported by the Korea Science and Engineering Foundation KOSEF grant funded by the Korea government MOST No. R01-2006-000-11247-0.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectDISILICIDE NANOWIRES-
dc.subjectBAND-STRUCTURE-
dc.subjectSURFACES-
dc.subjectSI(001)-
dc.subjectPT/SI(001)-
dc.subjectBEHAVIOR-
dc.subjectMEMORY-
dc.subjectLOGIC-
dc.subjectSTEPS-
dc.titleUnidirectional Pt silicide nanowires grown on vicinal Si(100)-
dc.typeArticle-
dc.identifier.wosid000253761600028-
dc.identifier.scopusid2-s2.0-40549110274-
dc.type.rimsART-
dc.citation.volume128-
dc.citation.issue9-
dc.citation.publicationnameJOURNAL OF CHEMICAL PHYSICS-
dc.identifier.doi10.1063/1.2835543-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorKim, JK-
dc.contributor.nonIdAuthorYeom, HW-
dc.contributor.nonIdAuthorLee, H-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDISILICIDE NANOWIRES-
dc.subject.keywordPlusBAND-STRUCTURE-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusPT/SI(001)-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusLOGIC-
dc.subject.keywordPlusSTEPS-
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