RECONSTRUCTION ON SI(100) SURFACES

Abstract

We have observed several reconstructions on a Si(100) surface with different annealing procedures. The observed reconstructed phases are the coexistence of the (2X2) phase and the (2X8) phase after high-temperature (greater than or similar to 950 K) annealing followed by quenching, and the half-order streak with the presence of the (2X1) phase after low-temperature (less than or similar to 950 K) annealing. The phase transition from the metastable (2X2) and (2X8) phases to the stable half-order streak is reversible upon annealing temperature and cooling rate. The distribution of kinks and missing dimer defects is expected to be the main cause of these reconstructions.