Effects of Carrier-Velocity Saturation in the LDD Region on the Characteristics of Short Chanel LDD MOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, Songcheol | - |
| dc.contributor.author | Lee, M | - |
| dc.contributor.author | Lee, J | - |
| dc.contributor.author | Kang, K | - |
| dc.contributor.author | Yoon, K | - |
| dc.date.accessioned | 2013-03-14T19:52:57Z | - |
| dc.date.available | 2013-03-14T19:52:57Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991 | - |
| dc.identifier.citation | ISDRS, v., no., pp.477 - 480 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112610 | - |
| dc.language | ENG | - |
| dc.title | Effects of Carrier-Velocity Saturation in the LDD Region on the Characteristics of Short Chanel LDD MOSFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 477 | - |
| dc.citation.endingpage | 480 | - |
| dc.citation.publicationname | ISDRS | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Lee, M | - |
| dc.contributor.nonIdAuthor | Lee, J | - |
| dc.contributor.nonIdAuthor | Kang, K | - |
| dc.contributor.nonIdAuthor | Yoon, K | - |
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