Reative ion etching properties of aluminum oxide films for etch mask
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이원종 | - |
| dc.contributor.author | 김재환 | - |
| dc.date.accessioned | 2013-03-14T19:02:53Z | - |
| dc.date.available | 2013-03-14T19:02:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992 | - |
| dc.identifier.citation | Proceedings of 1992 RETCAM Meetings on Thin Films and Crystal Growth, v., no., pp.70 - 79 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112156 | - |
| dc.language | KOR | - |
| dc.title | Reative ion etching properties of aluminum oxide films for etch mask | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 70 | - |
| dc.citation.endingpage | 79 | - |
| dc.citation.publicationname | Proceedings of 1992 RETCAM Meetings on Thin Films and Crystal Growth | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 이원종 | - |
| dc.contributor.nonIdAuthor | 김재환 | - |
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