Reative ion etching properties of aluminum oxide films for etch mask

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dc.contributor.author이원종-
dc.contributor.author김재환-
dc.date.accessioned2013-03-14T19:02:53Z-
dc.date.available2013-03-14T19:02:53Z-
dc.date.created2012-02-06-
dc.date.issued1992-
dc.identifier.citationProceedings of 1992 RETCAM Meetings on Thin Films and Crystal Growth, v., no., pp.70 - 79-
dc.identifier.urihttp://hdl.handle.net/10203/112156-
dc.languageKOR-
dc.titleReative ion etching properties of aluminum oxide films for etch mask-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage70-
dc.citation.endingpage79-
dc.citation.publicationnameProceedings of 1992 RETCAM Meetings on Thin Films and Crystal Growth-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor이원종-
dc.contributor.nonIdAuthor김재환-
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MS-Conference Papers(학술회의논문)
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