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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Formation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorAsano, T-
dc.contributor.authorIshiwara, H-
dc.contributor.authorTsutsui, K-
dc.contributor.authorFurukawa, S-
dc.date.accessioned2013-03-14T17:42:06Z-
dc.date.available2013-03-14T17:42:06Z-
dc.date.created2012-02-06-
dc.date.issued1985-
dc.identifier.citationExtended Abstracts 17th Conf. on Solid State Devices and Materials, v., no., pp.217 - 220-
dc.identifier.urihttp://hdl.handle.net/10203/111432-
dc.languageENG-
dc.titleFormation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage217-
dc.citation.endingpage220-
dc.citation.publicationnameExtended Abstracts 17th Conf. on Solid State Devices and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorAsano, T-
dc.contributor.nonIdAuthorIshiwara, H-
dc.contributor.nonIdAuthorTsutsui, K-
dc.contributor.nonIdAuthorFurukawa, S-
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EE-Conference Papers(학술회의논문)
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