SOI MOSFET with Grounded Body Potential by using the Silicon Direct Bonding(SDB) Technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sang-Won Kang | - |
| dc.date.accessioned | 2013-03-14T16:44:36Z | - |
| dc.date.available | 2013-03-14T16:44:36Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | IEEE Proc. of the SOI Conf., v., no., pp.96 - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/110891 | - |
| dc.language | ENG | - |
| dc.title | SOI MOSFET with Grounded Body Potential by using the Silicon Direct Bonding(SDB) Technology | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 96 | - |
| dc.citation.publicationname | IEEE Proc. of the SOI Conf. | - |
| dc.contributor.localauthor | Sang-Won Kang | - |
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