DC Field | Value | Language |
---|---|---|
dc.contributor.author | Suh, Kiseok | - |
dc.contributor.author | Go, Heeyoung | - |
dc.contributor.author | Lee, Shin-Young | - |
dc.contributor.author | Chang, Jee Soo | - |
dc.contributor.author | Yang, Moon-Seung | - |
dc.contributor.author | Shin, Jung H. | - |
dc.date.accessioned | 2009-09-07T01:13:38Z | - |
dc.date.available | 2009-09-07T01:13:38Z | - |
dc.date.issued | 2008-02-12 | - |
dc.identifier.citation | Proc. of SPIE, Vol. 6897, pp.68970G-1-68970G-8 | en |
dc.identifier.uri | http://hdl.handle.net/10203/11020 | - |
dc.description.abstract | We report on fabricating ErxY2-xSiO5 nanocrystals using ErCl3⋅6H2O and YCl3⋅6H2O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at. % Er without clustering and loss of optical activity, and use of Y enables continuous mixing of Er and Y for controlling cooperative upconversion. We obtain a cooperative upconversion coefficients of (2.2±1.1)×10-18 cm3/s and (5.4±2.7)×10-18 cm3/s at an Er concentration of 1.2×1021 cm-3 and 2.0×1021 cm-3, respectively. These values are up to 10 times lower at 10 times higher Er concentration than those reported for Er-doped silica, and shows that up to 69 dB/cm gain could be achieved for ultra-compact optical amplification. Also, we report on the deposition of ErxY2-xSiO5 thin film on Si substrate using ion beam sputter deposition. Rapid thermal annealing at 1100 °C is enough to form crystal phase the film and activate most of Er3+ ions. | en |
dc.language.iso | en_US | en |
dc.publisher | International Society for Optical Engineering (SPIE) | en |
dc.subject | erbium | en |
dc.subject | silicate | en |
dc.subject | upconversion | en |
dc.subject | Si photonics | en |
dc.title | ErxY2-xSiO5 nanocrystal and thin film for high gain per length material | en |
dc.type | Article | en |
dc.identifier.doi | 10.1117/12.764400 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.