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Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions Kim, CK; Miyamoto, T; Lee, Yong-Hee, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.11, pp.5994 - 5996, 1998-11 |
Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal Baek, JH; Song, DS; Hwang, IK; Lee, KH; Lee, Yong-Hee; Ju, YG; Kondo, T; et al, OPTICS EXPRESS, v.12, pp.859 - 867, 2004-03 |
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