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1
Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures

Kim, TW; Choo, DC; Yoo, KH; Jung, MH; Cho, Yong-Hoon; Lee, JH, JOURNAL OF APPLIED PHYSICS, v.97, pp.1052 - 1057, 2005-05

2
Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05

3
Magnetotransport, optical, and electronic subband properties in AlxGa1-xN/AlN/GaN heterostructures

Kim, TW; Choo, DC; Jang, YR; Yoo, KH; Jung, MH; Cho, Yong-Hoon; Lee, JH, SOLID STATE COMMUNICATIONS, v.132, pp.67 - 70, 2004-10

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