Showing results 4 to 10 of 10
Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition Cuniot-Ponsard, M.; Saraswati, I.; Ko, Suck Min; Halbwax, M.; Cho, Yong-Hoon; Dogheche, E., APPLIED PHYSICS LETTERS, v.104, no.10, pp.101908-1 - 101908-4, 2014-03 |
Growth of AlN and GaN thin films on Si(100) using new single molecular precursors by MOCVD method Boo, JH; Lee, SB; Kim, YS; Park, Joon Taik; Yu, KS; Kim, Y, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.176, no.1, pp.711 - 717, 1999-11 |
Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4 substrate Kim, ST; Lee, YJ; Moon, DC; Lee, C; Park, Hae-Yong, JOURNAL OF ELECTRONIC MATERIALS, v.27, no.10, pp.1112 - 1116, 1998 |
Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and Raman spectroscopy Park, Hae Yong; Kim, Jae Eun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.163 - 167, 1999-02 |
Structural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films Bae, BJ; Park, JE; Kim, Bongsoo; Park, Joon Taik, JOURNAL OF ORGANOMETALLIC CHEMISTRY, v.616, no.1-2, pp.128 - 134, 2000-12 |
Synthesis and characterization of [Me(2)M-mu-N(H)NMe(2)](2) (M = Al, Ga). Crystal structure of trans [Me(2)Al-mu-N(H)NMe(2)](2) Kim, Y; Kim, JH; Park, JE; Song, Hyunjoon; Park, Joon Taik, JOURNAL OF ORGANOMETALLIC CHEMISTRY, v.545, pp.99 - 103, 1997-10 |
Trans-cis isomerization and structure of dimeric [Me2M-mu-N(H)NPh2](2) (M = Al, Ga) Cho, D; Park, JE; Bae, BJ; Lee, K; Kim, Bongsoo, JOURNAL OF ORGANOMETALLIC CHEMISTRY, v.592, no.2, pp.162 - 167, 1999-12 |
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