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Showing results 9 to 15 of 15

9
Finite-size supercell correction scheme for the formation energy of charged defects in silicon nanowire

Kim, Sung Hyun; Park, Ji Sang; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07

10
First Principles Study on the Electronic Properties of Ge/Sn Core-Shell Nanowires

Pratidhina, Elisabeth; Kim, Sunghyun; Chang, Kee Joo, 2016 봄학술논문발표회 및 제92회 정기총회, 한국물리학회, 2016-04

11
First-principles band unfolding method for nanowires

Kim, Sunghyun; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11

12
First-principles supercell calculations for accurate defect transition levels in silicon nanowires

김성현; 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04

13
Ge/Sn core-shell nanowires with direct band gaps: A first-principles study

Pratidhina, Elisabeth; Kim, Sunghyun; Chang, Kee Joo, 제12회 고등과학원 전자구조 계산학회, KIAS, 2016-06

14
The electronic and optical properties of Ge/Sn core-shell nanowires

Pratidhina, Elisabeth; Kim, Sunghyun; Chang, Kee Joo, The 18th International Symposium on the Physics of Semiconductors and Applications, 한국물리학회, 2016-07

15
To acieve accurate formation energies of charged defects in one-dimensional systems

김성현; 박지상; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06

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