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High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; et al, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03 |
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