Microstructural characterization of heterointerfaces in MOCVD grown InGaAs/GaAs strained-layer system using cross section transmission electron micros
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, M. C. | - |
| dc.contributor.author | Park, HyoHoon | - |
| dc.contributor.author | Kwon, O. J. | - |
| dc.date.accessioned | 2013-03-14T14:31:56Z | - |
| dc.date.available | 2013-03-14T14:31:56Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993-04-05 | - |
| dc.identifier.citation | Inst. Phys. the Royal Microscopical Society Conference: Microscopy of Semiconducting Materials 1993, v., no., pp.481 - 484 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/109722 | - |
| dc.language | ENG | - |
| dc.title | Microstructural characterization of heterointerfaces in MOCVD grown InGaAs/GaAs strained-layer system using cross section transmission electron micros | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 481 | - |
| dc.citation.endingpage | 484 | - |
| dc.citation.publicationname | Inst. Phys. the Royal Microscopical Society Conference: Microscopy of Semiconducting Materials 1993 | - |
| dc.identifier.conferencecountry | United Kingdom | - |
| dc.identifier.conferencecountry | United Kingdom | - |
| dc.contributor.localauthor | Park, HyoHoon | - |
| dc.contributor.nonIdAuthor | Park, M. C. | - |
| dc.contributor.nonIdAuthor | Kwon, O. J. | - |
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