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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Diffusion and Epitaxial Growth of Si on As-terminated Si (100) Surfaces

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dc.contributor.authorKo, YJ-
dc.contributor.authorYi, JY-
dc.contributor.authorPark, SJ-
dc.contributor.authorLee, EH-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-14T14:31:25Z-
dc.date.available2013-03-14T14:31:25Z-
dc.date.created2012-02-06-
dc.date.issued1994-
dc.identifier.citation한국물리학회 학술발표회, v., no., pp.272 - 272-
dc.identifier.urihttp://hdl.handle.net/10203/109718-
dc.languageENG-
dc.publisher한국물리학회-
dc.titleDiffusion and Epitaxial Growth of Si on As-terminated Si (100) Surfaces-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage272-
dc.citation.endingpage272-
dc.citation.publicationname한국물리학회 학술발표회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorKo, YJ-
dc.contributor.nonIdAuthorYi, JY-
dc.contributor.nonIdAuthorPark, SJ-
dc.contributor.nonIdAuthorLee, EH-
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PH-Conference Papers(학술회의논문)
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