Structural and Electronic Properties of Cubic, 2H, 4H, and 6H SiC

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dc.contributor.authorPark, CH-
dc.contributor.authorJeong, BH-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-14T14:11:51Z-
dc.date.available2013-03-14T14:11:51Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationThe Symposium '93 on Theoretical Solid State Physics, v., no., pp.117 - 117-
dc.identifier.urihttp://hdl.handle.net/10203/109554-
dc.languageENG-
dc.titleStructural and Electronic Properties of Cubic, 2H, 4H, and 6H SiC-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage117-
dc.citation.endingpage117-
dc.citation.publicationnameThe Symposium '93 on Theoretical Solid State Physics-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorPark, CH-
dc.contributor.nonIdAuthorJeong, BH-
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PH-Conference Papers(학술회의논문)
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