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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Poly(5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene-co-maleic anhydride) for 193-nm lithography

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dc.contributor.authorKim, Jin-Baekko
dc.contributor.authorLee, JJko
dc.contributor.authorKang, JSko
dc.date.accessioned2009-09-02T05:28:19Z-
dc.date.available2009-09-02T05:28:19Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-08-
dc.identifier.citationPOLYMER, v.41, no.18, pp.6939 - 6942-
dc.identifier.issn0032-3861-
dc.identifier.urihttp://hdl.handle.net/10203/10934-
dc.description.abstractA copolymer of 5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene and maleic anhydride) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 193 nm and possesses good thermal stability up to 195 degrees C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl ester group begins at 76 degrees C in a catalytic manner. The 0.18 mu m line and space patterns were obtained at a dose of 10 mJ cm(-2) using an ArF excimer laser stepper. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.-
dc.description.sponsorshipKAIST Korea Science and Engineering Foundationen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCI LTD-
dc.subjectPOLY(2-TRIMETHYLSILYL-2-PROPYL METHACRYLATE)-
dc.subjectARF LITHOGRAPHY-
dc.subjectPHOTORESIST-
dc.subjectDESIGN-
dc.subjectRESIST-
dc.titlePoly(5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene-co-maleic anhydride) for 193-nm lithography-
dc.typeArticle-
dc.identifier.wosid000087610200028-
dc.identifier.scopusid2-s2.0-0342699664-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue18-
dc.citation.beginningpage6939-
dc.citation.endingpage6942-
dc.citation.publicationnamePOLYMER-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Jin-Baek-
dc.contributor.nonIdAuthorLee, JJ-
dc.contributor.nonIdAuthorKang, JS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthor193-nm photoresist-
dc.subject.keywordAuthornorbornene-
dc.subject.keywordAuthorsilicon-containing polymer-
dc.subject.keywordPlusPOLY(2-TRIMETHYLSILYL-2-PROPYL METHACRYLATE)-
dc.subject.keywordPlusARF LITHOGRAPHY-
dc.subject.keywordPlusPHOTORESIST-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusRESIST-
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