Novel photobleachable deep UV resists based on single component nonchemically amplified resist system

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Photobleachable deep UV resists were designed by introducing diazoketo groups in polymer side chains. The diazoketo groups undergo; the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base-soluble photoproducts. The polymers were synthesized by radical copolymerization of 2-(2-diazo-3-oxo-butyryloxy)-ethyl methacrylate, 2-hydroxyethyl meth acrylate, and gamma-butyrolacton-2-yl methacrylate. The single component resist showed 0.7 mu m line and space patterns using a mercury-xenon lamp in a contact printing mode.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2005-09
Language
English
Article Type
Article
Keywords

CHEMICAL AMPLIFICATION; LITHOGRAPHY; PHOTORESISTS; METHACRYLATE

Citation

MACROMOLECULAR RAPID COMMUNICATIONS, v.26, no.17, pp.1412 - 1417

ISSN
1022-1336
DOI
10.1002/marc.200500317
URI
http://hdl.handle.net/10203/10931
Appears in Collection
CH-Journal Papers(저널논문)
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