Photobleachable deep UV resists were designed by introducing diazoketo groups in polymer side chains. The diazoketo groups undergo; the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base-soluble photoproducts. The polymers were synthesized by radical copolymerization of 2-(2-diazo-3-oxo-butyryloxy)-ethyl methacrylate, 2-hydroxyethyl meth acrylate, and gamma-butyrolacton-2-yl methacrylate. The single component resist showed 0.7 mu m line and space patterns using a mercury-xenon lamp in a contact printing mode.