A New Evaluation of the Activation Energy for Interface State Generation due to Hot-Carrier Effects

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dc.contributor.authorLee, Kwyro-
dc.contributor.authorKim, Shi-Ho-
dc.contributor.authorMin, Kyeong-Sik-
dc.date.accessioned2013-03-14T13:30:59Z-
dc.date.available2013-03-14T13:30:59Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationTechnical Digest of 3rd International Conference on VLSI and CAD, v., no., pp.90 - 92-
dc.identifier.urihttp://hdl.handle.net/10203/109211-
dc.languageENG-
dc.titleA New Evaluation of the Activation Energy for Interface State Generation due to Hot-Carrier Effects-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage90-
dc.citation.endingpage92-
dc.citation.publicationnameTechnical Digest of 3rd International Conference on VLSI and CAD-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorKim, Shi-Ho-
dc.contributor.nonIdAuthorMin, Kyeong-Sik-
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EE-Conference Papers(학술회의논문)
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