Gate-Induced Drain Leakage in MOSFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-14T13:13:11Z | - |
| dc.date.available | 2013-03-14T13:13:11Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | International Symposium on Physics of Semiconductors and Applications, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/109054 | - |
| dc.language | ENG | - |
| dc.title | Gate-Induced Drain Leakage in MOSFETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Symposium on Physics of Semiconductors and Applications | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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