DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Choong Ki | - |
dc.date.accessioned | 2013-03-14T12:59:47Z | - |
dc.date.available | 2013-03-14T12:59:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1983 | - |
dc.identifier.citation | International Symposium on VLSI Technology,Systems and Applications, v., no., pp.170 - 173 | - |
dc.identifier.uri | http://hdl.handle.net/10203/108948 | - |
dc.language | ENG | - |
dc.title | Threshold Voltage Shift Due to the Change of Impurity Type of Polysilicon in Heavily Doped Polysilicon Gate MOSFET | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 170 | - |
dc.citation.endingpage | 173 | - |
dc.citation.publicationname | International Symposium on VLSI Technology,Systems and Applications | - |
dc.identifier.conferencecountry | Taiwan, Province of China | - |
dc.identifier.conferencecountry | Taiwan, Province of China | - |
dc.contributor.localauthor | Kim, Choong Ki | - |
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