Schottky Properties of Ion Beam Deposited W-Si-N Refractory Contacts on GaAs

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dc.contributor.authorLee, Jeong Yong-
dc.date.accessioned2013-03-14T12:55:20Z-
dc.date.available2013-03-14T12:55:20Z-
dc.date.created2012-02-06-
dc.date.issued1989-10-01-
dc.identifier.citationKITE and IEEE Korea Sec, v., no., pp.408 - 408-
dc.identifier.urihttp://hdl.handle.net/10203/108915-
dc.languageENG-
dc.titleSchottky Properties of Ion Beam Deposited W-Si-N Refractory Contacts on GaAs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage408-
dc.citation.endingpage408-
dc.citation.publicationnameKITE and IEEE Korea Sec-
dc.contributor.localauthorLee, Jeong Yong-
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MS-Conference Papers(학술회의논문)
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