Schottky Properties of Ion Beam Deposited W-Si-N Refractory Contacts on GaAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-14T12:55:20Z | - |
| dc.date.available | 2013-03-14T12:55:20Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-10-01 | - |
| dc.identifier.citation | KITE and IEEE Korea Sec, v., no., pp.408 - 408 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108915 | - |
| dc.language | ENG | - |
| dc.title | Schottky Properties of Ion Beam Deposited W-Si-N Refractory Contacts on GaAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 408 | - |
| dc.citation.endingpage | 408 | - |
| dc.citation.publicationname | KITE and IEEE Korea Sec | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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