Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing

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dc.contributor.authorKim, Choong Ki-
dc.contributor.authorChul-Hi Han-
dc.date.accessioned2013-03-14T11:54:18Z-
dc.date.available2013-03-14T11:54:18Z-
dc.date.created2012-02-06-
dc.date.issued1994-
dc.identifier.citationInternational Conference on Solid State Device and Materials, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/108404-
dc.languageENG-
dc.titleSuppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameInternational Conference on Solid State Device and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorKim, Choong Ki-
dc.contributor.localauthorChul-Hi Han-
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