Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Choong Ki | - |
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-14T11:54:18Z | - |
| dc.date.available | 2013-03-14T11:54:18Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | International Conference on Solid State Device and Materials, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108404 | - |
| dc.language | ENG | - |
| dc.title | Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Conference on Solid State Device and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Kim, Choong Ki | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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