Microstructural Investigation of AuGe/Ni Ohmic Contact to Ion-Implanted n-GaAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong, Yong | - |
| dc.date.accessioned | 2013-03-14T11:45:11Z | - |
| dc.date.available | 2013-03-14T11:45:11Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-12-01 | - |
| dc.identifier.citation | Proc. Kor. Inst. Telem. Elect. on Semicon., Mater., v., no., pp.267 - 267 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108334 | - |
| dc.language | KOR | - |
| dc.title | Microstructural Investigation of AuGe/Ni Ohmic Contact to Ion-Implanted n-GaAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 267 | - |
| dc.citation.endingpage | 267 | - |
| dc.citation.publicationname | Proc. Kor. Inst. Telem. Elect. on Semicon., Mater. | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Jeong, Yong | - |
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