DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kwyro | - |
dc.contributor.author | Rho, Kwang-Myung | - |
dc.date.accessioned | 2013-03-14T09:50:47Z | - |
dc.date.available | 2013-03-14T09:50:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991 | - |
dc.identifier.citation | Technical Digest of 2nd International Conference on VLSI and CAD, v., no., pp.167 - 170 | - |
dc.identifier.uri | http://hdl.handle.net/10203/107558 | - |
dc.language | ENG | - |
dc.title | A Unified Capacitance-Voltage Model of MOSFET | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 167 | - |
dc.citation.endingpage | 170 | - |
dc.citation.publicationname | Technical Digest of 2nd International Conference on VLSI and CAD | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Lee, Kwyro | - |
dc.contributor.nonIdAuthor | Rho, Kwang-Myung | - |
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