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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

AlGaAs/GaAs HBT Fabricated using Selective MOCVD

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dc.contributor.authorKwon, Young Se-
dc.contributor.authorHong, Songcheol-
dc.contributor.authorSon, JH-
dc.contributor.authorKim, CT-
dc.date.accessioned2013-03-14T08:21:24Z-
dc.date.available2013-03-14T08:21:24Z-
dc.date.created2012-02-06-
dc.date.issued1994-
dc.identifier.citationInternational Conference on Solid State Device and Materials, v., no., pp.610 - 612-
dc.identifier.urihttp://hdl.handle.net/10203/106955-
dc.languageENG-
dc.titleAlGaAs/GaAs HBT Fabricated using Selective MOCVD-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage610-
dc.citation.endingpage612-
dc.citation.publicationnameInternational Conference on Solid State Device and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorSon, JH-
dc.contributor.nonIdAuthorKim, CT-
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EE-Conference Papers(학술회의논문)EE-Conference Papers(학술회의논문)
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