DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김충기 | - |
dc.contributor.author | 한철희 | - |
dc.date.accessioned | 2013-03-14T08:09:44Z | - |
dc.date.available | 2013-03-14T08:09:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | International Conference on VLSI and CAD, v., no., pp.106 - 109 | - |
dc.identifier.uri | http://hdl.handle.net/10203/106860 | - |
dc.language | KOR | - |
dc.title | Two Layer Gate Insulator with ECR Plasma Thermal Oxide/LPCVD Oxide for High Performance Polysilicon Thin Film Transistor | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 106 | - |
dc.citation.endingpage | 109 | - |
dc.citation.publicationname | International Conference on VLSI and CAD | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | 김충기 | - |
dc.contributor.localauthor | 한철희 | - |
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