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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field Effect Transistor

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dc.contributor.authorKwon, Young Se-
dc.contributor.authorHong, Songcheol-
dc.contributor.authorLee, YJ-
dc.contributor.authorYoon, HK-
dc.contributor.authorOh, KH-
dc.date.accessioned2013-03-14T07:57:46Z-
dc.date.available2013-03-14T07:57:46Z-
dc.date.created2012-02-06-
dc.date.issued1994-
dc.identifier.citationInternational Conference on Solid State Device and Materials, v., no., pp.793 - 795-
dc.identifier.urihttp://hdl.handle.net/10203/106766-
dc.languageENG-
dc.titleNumerical Simulation on the Device Structure of GaAs Floated Electron Channel Field Effect Transistor-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage793-
dc.citation.endingpage795-
dc.citation.publicationnameInternational Conference on Solid State Device and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorLee, YJ-
dc.contributor.nonIdAuthorYoon, HK-
dc.contributor.nonIdAuthorOh, KH-
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EE-Conference Papers(학술회의논문)EE-Conference Papers(학술회의논문)
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