A P-Channel Schottky-Clamped MOSFET Utilizing Boron-Doped Sidewall Oxide

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Issue Date
1985-05
Language
ENG
Citation

International Symposium on VLSI Technology,Systems and Applications, pp.250 - 253

URI
http://hdl.handle.net/10203/106499
Appears in Collection
EE-Conference Papers(학술회의논문)
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